Characterization of Piezoelectric Microspeaker Fabricated with C-axis Oriented ZnO Thin Film

Preparation and proposed mechanism of ZnO Nanostructure Thin Film on Glass with Highest c-axis Orientation

In this paper, ZnO thin film is deposited on slide glass substrate using the sol-gel process. Presenting well-defined orientation of ZnO thin films Nanostructure were obtained by dip coating of zinc acetate dihydrate, monoethanolamine (MEA), de-ionized water and isopropanol alcohol. The annealed ZnO thin films were transparent ca 85-90% in visible range with an absorption edges at about 375 nm....

preparation and proposed mechanism of zno nanostructure thin film on glass with highest c-axis orientation

in this paper, zno thin film is deposited on slide glass substrate using the sol-gel process. presenting well-defined orientation of zno thin films nanostructure were obtained by dip coating of zinc acetate dihydrate, monoethanolamine (mea), de-ionized water and isopropanol alcohol. the annealed zno thin films were transparent ca 85-90% in visible range with an absorption edges at about 375 nm....

A Micro-Fabricated Force Sensor Using an All Thin Film Piezoelectric Active Sensor

The ability to measure pressure and force is essential in biomedical applications such as minimally invasive surgery (MIS) and palpation for detecting cancer cysts. Here, we report a force sensor for measuring a shear and normal force by combining an arrayed piezoelectric sensors layer with a precut glass top plate connected by four stress concentrating legs. We designed and fabricated a thin f...

Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10-13A, I on/I off ratio ...

Exploration of ZnO and ZnMgO/ZnO Thin Film Transistors